Merge pull request #41 from mabrains/prim_naming

Updating primitive names

docs/IPs/IO/gf180mcu_fd_io/gf180mcu_fd_io__1.rst

@@ -17,7 +17,7 @@ This document serves as the data sheet for **GlobalFoundries 0.18µm Green (5.0V
 1.2 Device List
 ---------------
 
-nmos_6p0, pmos_6p0, pn_6p0, np_6p0, ppolyf_u, nmoscap_6p0, nmos_6p0_sab, pmos_6p0_sab.
+nfet_06v0, pfet_06v0, diode_pd2nw_06v0, diode_nd2ps_06v0, ppolyf_u, cap_nmos_06v0, nfet_06v0_dss, pfet_06v0_dss.
 
 1.3 Design Manual
 -----------------

docs/analog/model_parameters/HV/HV_4_1.rst

@@ -40,7 +40,7 @@ The following plots show an example of the results when fet_mc_skew is set to di
 
 The value of the fet_mc_skew parameter can be any real number greater than 0. When simulating MC parallel device, in order to get consistent mismatch results, both “m” and “par” multiplicity factors parameters are needed. It must instantiated as follows:
 
-- Xm11 2 0 0nmos_10p0_asymw=10u l=10u m=10
+- Xm11 2 0 0nfet_10v0_asymw=10u l=10u m=10
 
-- Xm21 2 0 0pmos_10p0_asymw=10u l=10u m=10
+- Xm21 2 0 0pfet_10v0_asymw=10u l=10u m=10
 

docs/analog/model_parameters/HV/tables_clear/1_MOSFETs.csv

@@ -3,5 +3,5 @@ Model Name,Device Description,BSIM Version,Scalable,"Corner Model
 Available","Global
 
 Statistical",NF scaling
-nmos_10p0_asym,Asymmetrical LDNMOS (10V),4.6,Y,Y,Y,N
-pmos_10p0_asym,Asymmetrical LDPMOS (10V),4.6,Y,Y,Y,N
+nfet_10v0_asym,Asymmetrical LDNMOS (10V),4.6,Y,Y,Y,N
+pfet_10v0_asym,Asymmetrical LDPMOS (10V),4.6,Y,Y,Y,N

docs/analog/model_parameters/HV/tables_clear/3_Instance_Parameter_Range.csv

@@ -3,12 +3,12 @@
 (BSIM Version)","Parameter
 
 Value",W (um),L (um),M,as (m^2),ad (m^2),ps(m),pd (m)
-"nmos_10p0_asym
+"nfet_10v0_asym
 
 (BSIM 4.6)",Min,4,0.6,1,-,-,-,-
 ,Max,50,20,100,-,-,-,-
 ,Default,25,0.6,1,1.2E-11,3.7E-11,5.10E-05,5.30E-05
-"pmos_10p0_asym
+"pfet_10v0_asym
 
 (BSIM 4.6)",Min,4,0.6,1,-,-,-,-
 ,Max,50,20,100,-,-,-,-

docs/analog/model_parameters/HV/tables_clear/5_Nominal1.csv

@@ -1,11 +1,11 @@
 EP Specification,,,,Measurement,
 Device (W/L), Model,Idsat (uA/um),Vtlin,Idsat (uA/um),Vtlin (V)
-"nmos_10p0_asym
+"nfet_10v0_asym
 
  (25/0.6),nf=1",slow,444,0.97,\-,\-
 ,typical ,535,0.84,543,0.83
 , fast ,626,0.71,\-,\-
-"pmos_10p0_asym
+"pfet_10v0_asym
 
  (25/0.6),nf=1",slow ,-200,-0.88,\-,\-
 ,typical ,-260,-1.02,-268,-1.02

docs/analog/model_parameters/HV/tables_clear/6_Statistical_Models.csv

@@ -1,5 +1,5 @@
 MOSFET Model,"Both Local
 
 and Global",Description
-nmos_10p0_asym,global only,Statistical BSIM4 model for Asym 10 V LDNMOS
-pmos_10p0_asym,global only,Statistical BSIM4 model for Asym 10V LDPMOS
+nfet_10v0_asym,global only,Statistical BSIM4 model for Asym 10 V LDNMOS
+pfet_10v0_asym,global only,Statistical BSIM4 model for Asym 10V LDPMOS

docs/analog/model_parameters/LV/LV_2_5.rst

@@ -7,20 +7,20 @@ The measured and simulated results are obtained using the following bias conditi
 
 where
 
-- Vdd = 3.3V for nmos_3p3
+- Vdd = 3.3V for nfet_03v3
 
-- Vdd =-3.3V for pmos_3p3
+- Vdd =-3.3V for pfet_03v3
 
-- Vdd = 6V for nmos_6p0
+- Vdd = 6V for nfet_06v0
 
-- Vdd =-6V for pmos_6p0
+- Vdd =-6V for pfet_06v0
 
-- Vdd = 6V for nmos_6p0_nat
+- Vdd = 6V for nfet_06v0_nvt
 
 .. note::
    Vth0 is the measured or simulated threshold voltage obtained using the max Gm method at Vd = 0.05V. For 6.0V native NMOS, Vth0 is measured and simulated at Vd=0.1V. Vth1 is the simulated threshold voltage obtained using the BSIM equation. These two values may have a difference.
 
-2.5.1 nmos_3p3 and pmos_3p3 (3.3V)
+2.5.1 nfet_03v3 and pfet_03v3 (3.3V)
 ..................................
 
 .. csv-table::
@@ -35,23 +35,23 @@ where
 
 .. note::
 
-   - nmos_3p3_sab SAB Length on Drain side SAB DOP: 1.78um , Source Side SAB SOP: 0.48um
+   - nfet_03v3_dss SAB Length on Drain side SAB DOP: 1.78um , Source Side SAB SOP: 0.48um
 
-   - pmos_3p3_sab SAB Length on Drain side SAB DOP: 1.78um, Source Side SAB SOP: 0.48um
+   - pfet_03v3_dss SAB Length on Drain side SAB DOP: 1.78um, Source Side SAB SOP: 0.48um
 
-2.5.3 nmos_6p0 and pmos_6p0 (6V)
+2.5.3 nfet_06v0 and pfet_06v0 (6V)
 ................................
 
 .. csv-table::
    :file: tables_clear/21_mos_6p0.csv
 
 .. note::
 
-   - nmos_6p0_sab Length of SAB on Drain side : 3.78um, Length of SAB on Source side: 0.28um
+   - nfet_06v0_dss Length of SAB on Drain side : 3.78um, Length of SAB on Source side: 0.28um
 
-   - pmos_6p0_sab Length of SAB on Drain side : 2.78um, Length of SAB on Source side: 0.28um
+   - pfet_06v0_dss Length of SAB on Drain side : 2.78um, Length of SAB on Source side: 0.28um
 
-2.5.4 nmos_6p0 and pmos_6p0 (5V)
+2.5.4 nfet_06v0 and pfet_06v0 (5V)
 ................................
 
 .. csv-table::

docs/analog/model_parameters/LV/LV_6.rst

@@ -21,7 +21,7 @@ Xxx  node_1  node_2  moscap_model_name  w =  l=
 
 **Examples:**
 
-Xc1 1 2 nmoscap_3p3 w=50u l=50u
+Xc1 1 2 cap_nmos_03v3 w=50u l=50u
 
 6.2 How to use the Models
 -------------------------

docs/analog/model_parameters/LV/LV_8_1.rst

@@ -1,7 +1,7 @@
 8.1 MOSFETs
 ===========
 
-8.1.1 nmos_3p3 (3.3V)
+8.1.1 nfet_03v3 (3.3V)
 .....................
 
 8.1.1.1 CV - Characteristics
@@ -88,7 +88,7 @@
    :align: center
    :alt: I/f Noise - Characteristics
 
-8.1.2 pmos_3p3 (3.3V)
+8.1.2 pfet_03v3 (3.3V)
 .....................
 
 8.1.2.1 CV - Characteristics
@@ -175,7 +175,7 @@
    :align: center
    :alt: I/f Noise - Characteristics
 
-8.1.3 nmos_6p0 (6.0V)
+8.1.3 nfet_06v0 (6.0V)
 .....................
 
 8.1.3.1 CV - Characteristics
@@ -216,7 +216,7 @@
    :align: center
    :alt: I/f Noise - Characteristics
 
-8.1.4 pmos_6p0 (6.0V)
+8.1.4 pfet_06v0 (6.0V)
 .....................
 
 8.1.4.1 CV - Characteristics
@@ -263,7 +263,7 @@
    :align: center
    :alt: I/f Noise - Characteristics
 
-8.1.5 nmos_6p0_nat (6.0V)
+8.1.5 nfet_06v0_nvt (6.0V)
 .........................
 
 8.1.5.1 IV - Characteristics

docs/analog/model_parameters/LV/tables_clear/00_rev.csv

@@ -124,9 +124,9 @@ capacitance to correlate with the diode update
 
 1. Updated leakage current for 6V PMOS
 
-2. Added paper model SAB devices nmos_3p3_sab, pmos_3p3_sab, nmos_6p0_sab,
+2. Added paper model SAB devices nfet_03v3_dss, pfet_03v3_dss, nfet_06v0_dss,
 
-pmos_6p0_sab for 3.3V NMOS/PMOS and 6V NMOS/PMOS
+pfet_06v0_dss for 3.3V NMOS/PMOS and 6V NMOS/PMOS
 
 3. Added instance parameter ""s"" to allow defining resistors in series connection
 "
@@ -173,11 +173,11 @@ ppolyf_u_2k_6p0
 
 4. Added mismatch model for pplus_u/npolyf_u/ppolyf_u/nplus_u
 
-5. Added global statistical model for mim_1p0fF/mim_1p5fF/mim_2p0fF
+5. Added global statistical model for cap_mim_1p0fF/cap_mim_1p5fF/cap_mim_2p0fF
 
-6. Added global & mismatch model for vpnp_5x5/ vpnp_0p42x10/ vpnp_0p42x5/
+6. Added global & mismatch model for pnp_05p00x05p00/ pnp_10p00x00p42/ pnp_05p00x00p42/
 
-vpnp_10x10
+pnp_10p00x10p00
 
 7. Added global statistical model for VNPN
 "

docs/analog/model_parameters/LV/tables_clear/03_MOSFETs.csv

@@ -5,12 +5,12 @@ Model","Global
 Statistical","Local
 
 Statistical"
-nmos_3p3,BSIM4 model for 0.18um 3.3V NMOS,Y,Y,Y,Y
-pmos_3p3,BSIM4 model for 0.18um 3.3V PMOS,Y,Y,Y,Y
-nmos_6p0,BSIM4 model for 0.18um 6V NMOS,Y,Y,Y,Y
-pmos_6p0,BSIM4 model for 0.18um 6V PMOS,Y,Y,Y,Y
-nmos_3p3_sab,Subcircuit model for 3.3V NMOS with SAB,Y,Y,Y,Y
-pmos_3p3_sab,Subcircuit model for 3.3V PMOS with SAB,Y,Y,Y,Y
-nmos_6p0_sab,Subcircuit model for 6.0V NMOS with SAB,Y,Y,Y,Y
-pmos_6p0_sab,Subcircuit model for 6.0V PMOS with SAB,Y,Y,Y,Y
-nmos_6p0_nat,BSIM4 model for 0.18um 6V native NMOS,Y,Y,Y,N
+nfet_03v3,BSIM4 model for 0.18um 3.3V NMOS,Y,Y,Y,Y
+pfet_03v3,BSIM4 model for 0.18um 3.3V PMOS,Y,Y,Y,Y
+nfet_06v0,BSIM4 model for 0.18um 6V NMOS,Y,Y,Y,Y
+pfet_06v0,BSIM4 model for 0.18um 6V PMOS,Y,Y,Y,Y
+nfet_03v3_dss,Subcircuit model for 3.3V NMOS with SAB,Y,Y,Y,Y
+pfet_03v3_dss,Subcircuit model for 3.3V PMOS with SAB,Y,Y,Y,Y
+nfet_06v0_dss,Subcircuit model for 6.0V NMOS with SAB,Y,Y,Y,Y
+pfet_06v0_dss,Subcircuit model for 6.0V PMOS with SAB,Y,Y,Y,Y
+nfet_06v0_nvt,BSIM4 model for 0.18um 6V native NMOS,Y,Y,Y,N

docs/analog/model_parameters/LV/tables_clear/04_Diodes.csv

@@ -3,12 +3,12 @@ Model Name,Description,Scalable,"Corner
 Model","Global
 
 Statistical"
-np_3p3,Model for thin gate N+/Psub diode,Y,Y,N
-pn_3p3,Model for thin gate P+/Nwell diode,Y,Y,N
-np_6p0,Model for thin gate N+/Psub diode,Y,Y,N
-pn_6p0,Model for thin gate P+/Nwell diode,Y,Y,N
-nwp_3p3,Model for 3.3V Nwell/Psub diode,Y,Y,N
-nwp_6p0,Model for 6V Nwell/Psub diode,Y,Y,N
-dnwpw,Model for PWELL/DNWELL diode,Y,Y,N
-dnwps,Model for DNWELL/Psub diode,Y,Y,N
+diode_nd2ps_03v3,Model for thin gate N+/Psub diode,Y,Y,N
+diode_pd2nw_03v3,Model for thin gate P+/Nwell diode,Y,Y,N
+diode_nd2ps_06v0,Model for thin gate N+/Psub diode,Y,Y,N
+diode_pd2nw_06v0,Model for thin gate P+/Nwell diode,Y,Y,N
+diode_nw2ps_03v3,Model for 3.3V Nwell/Psub diode,Y,Y,N
+diode_nw2ps_06v0,Model for 6V Nwell/Psub diode,Y,Y,N
+diode_pw2dw,Model for PWELL/DNWELL diode,Y,Y,N
+diode_dw2ps,Model for DNWELL/Psub diode,Y,Y,N
 sc_diode,Model for Schottky diode,Y,Y,N

docs/analog/model_parameters/LV/tables_clear/05_BJTs.csv

@@ -5,10 +5,10 @@ Model","Global
 Statistical","Local
 
 Statistical"
-vpnp_10x10,"GP model for vertical PNP with
+pnp_10p00x10p00,"GP model for vertical PNP with
 
 emitter size of 10um x 10um",N,Y,Y,Y
-vpnp_5x5,"GP model for vertical PNP with
+pnp_05p00x05p00,"GP model for vertical PNP with
 
 emitter size of 5um x 5um",N,Y,Y,Y
 vpnp_0.42x10,"GP model for vertical PNP with
@@ -17,21 +17,21 @@ emitter size of 0.42um x 10um",N,Y,Y,Y
 vpnp_0.42x5,"GP model for vertical PNP with
 
 Emitter size of 0.42um x 5um",N,Y,Y,Y
-vnpn_10x10,"GP model for vertical NPN with
+npn_10p00x10p00,"GP model for vertical NPN with
 
 emitter size of 10umx10um",N,Y,Y,N
-vnpn_5x5,"GP model for vertical NPN with
+npn_05p00x05p00,"GP model for vertical NPN with
 
 emitter size of 5umx5um",N,Y,Y,N
-vnpn_0p54x16,"GP model for VNPN with
+npn_00p54x16p00,"GP model for VNPN with
 
 emitter size of 0.54umx16um",N,Y,Y,N
-vnpn_0p54x8,"GP model for VNPN with
+npn_00p54x08p00,"GP model for VNPN with
 
 emitter size of 0.54umx8um",N,Y,Y,N
-vnpn_0p54x4,"GP model for VNPN with
+npn_00p54x04p00,"GP model for VNPN with
 
 emitter size of 0.54umx4um",N,Y,Y,N
-vnpn_0p54x2,"GP model for VNPN with
+npn_00p54x02p00,"GP model for VNPN with
 
 emitter size of 0.54umx2um",N,Y,Y,N

docs/analog/model_parameters/LV/tables_clear/07_MOSCAP.csv

@@ -3,11 +3,11 @@ Model Name,Description,Scalable,"Corner
 Model","Statistical
 
 Model"
-nmoscap_3p3,Model for nominal IO 3.3V inversion-mode NMOS capacitor,Y,Y,N
-pmoscap_3p3,Model for nominal IO 3.3V inversion-mode PMOS capacitor,Y,Y,N
-nmoscap_6p0,Model for nominal IO 6V inversion -mode NMOS capacitor,Y,Y,N
-pmoscap_6p0,Model for nominal IO 6V inversion -mode PMOS capacitor,Y,Y,N
-nmoscap_3p3_b,Model for nominal IO 3.3V NMOS in Nwell capacitor,Y,Y,N
-pmoscap_3p3_b,Model for nominal IO 3.3V PMOS in Pwell capacitor,Y,Y,N
-nmoscap_6p0_b,Model for nominal IO 6V NMOS in Nwell capacitor,Y,Y,N
-pmoscap_6p0_b,Model for nominal IO 6V PMOS in Pwell capacitor,Y,Y,N
+cap_nmos_03v3,Model for nominal IO 3.3V inversion-mode NMOS capacitor,Y,Y,N
+cap_pmos_03v3,Model for nominal IO 3.3V inversion-mode PMOS capacitor,Y,Y,N
+cap_nmos_06v0,Model for nominal IO 6V inversion -mode NMOS capacitor,Y,Y,N
+cap_pmos_06v0,Model for nominal IO 6V inversion -mode PMOS capacitor,Y,Y,N
+cap_nmos_03v3_b,Model for nominal IO 3.3V NMOS in Nwell capacitor,Y,Y,N
+cap_pmos_03v3_b,Model for nominal IO 3.3V PMOS in Pwell capacitor,Y,Y,N
+cap_nmos_06v0_b,Model for nominal IO 6V NMOS in Nwell capacitor,Y,Y,N
+cap_pmos_06v0_b,Model for nominal IO 6V PMOS in Pwell capacitor,Y,Y,N

docs/analog/model_parameters/LV/tables_clear/08_MIM.csv

@@ -5,17 +5,17 @@ Model","Global
 Statistical","Local
 
 Statistical"
-nmoscap_3p3,"Model for 1.5fF/um2 MIM
+cap_nmos_03v3,"Model for 1.5fF/um2 MIM
 
 (*)-usable for Volt <=6V
 
 across capacitor",Y,Y,Y,N
-pmoscap_3p3,"Model for 1.0fF/um2 MIM
+cap_pmos_03v3,"Model for 1.0fF/um2 MIM
 
 (*)-usable for Volt <=6V
 
 across capacitor",Y,Y,Y,N
-nmoscap_6p0,"Model for 2.0fF/um2 MIM
+cap_nmos_06v0,"Model for 2.0fF/um2 MIM
 
 (*)-usable for Volt <=6V
 

docs/analog/model_parameters/LV/tables_clear/10_LV_NMOS.csv

@@ -3,12 +3,12 @@
 (BSIM Version)","Parameter
 
 Value",W,L,nf,as,ad,ps,pd,nrs,nrd,dtemp
-"nmos_3p3
+"nfet_03v3
 
 (BSIM 4.5)",Min,0.22,0.28,1,-,-,-,-,-,-,-
 ,Max,100,50,-,-,-,-,-,-,-,-
 ,Default,0,0,1,0,0,0,0,0,0,0
-"pmos_3p3
+"pfet_03v3
 
 (BSIM 4.5)",Min,0.22,0.28,1,-,-,-,-,-,-,-
 ,Max,50,100,-,-,-,-,-,-,-,-

docs/analog/model_parameters/LV/tables_clear/11_MV_NMOS.csv

@@ -3,17 +3,17 @@
 (BSIM Version)","Parameter
 
 Value",W,L,nf,as,ad,ps,pd,nrs,nrd,dtemp
-"nmos_6p0
+"nfet_06v0
 
 (BSIM 4.5)",Min,0.3,0.6,1,-,-,-,-,-,-,-
 ,Max,100,50,-,-,-,-,-,-,-,-
 ,Default,0,0,1,0,0,0,0,0,0,0
-"pmos_6p0
+"pfet_06v0
 
 (BSIM 4.5)",Min,0.3,0.5,1,-,-,-,-,-,-,-
 ,Max,100,50,-,-,-,-,-,-,-,-
 ,Default,0,0,1,0,0,0,0,0,0,0
-"nmos_6p0_nat
+"nfet_06v0_nvt
 
 (BSIM 4.6)",Min,0.8,1.8,1,-,-,-,-,-,-,-
 ,Max,100,50,-,-,-,-,-,-,-,-

docs/analog/model_parameters/LV/tables_clear/17_Noise.csv

@@ -1,6 +1,6 @@
 Device,Vds (V),Vgs (V),W x L (um x um)
-nmos_3p3,"0.1, 1.8, 3.3","0.8, 1.8, 3.3",10x0.28
-pmos_3p3,"-0.1, -1.8, -3.3","-0.8, -1.8, -3.3",10x0.28
-nmos_6p0,"0.1, 3, 6","1, 3, 6",10x0.7
-pmos_6p0,"-0.1, -3, -6","-1, -3, -6",10x0.55
-nmos_6p0_nat,"0.1, 3, 6","0.3, 3, 6",10x1.8
+nfet_03v3,"0.1, 1.8, 3.3","0.8, 1.8, 3.3",10x0.28
+pfet_03v3,"-0.1, -1.8, -3.3","-0.8, -1.8, -3.3",10x0.28
+nfet_06v0,"0.1, 3, 6","1, 3, 6",10x0.7
+pfet_06v0,"-0.1, -3, -6","-1, -3, -6",10x0.55
+nfet_06v0_nvt,"0.1, 3, 6","0.3, 3, 6",10x1.8

docs/analog/model_parameters/LV/tables_clear/19_mos_3p3.csv

@@ -1,11 +1,11 @@
 EP Specification,,,,Measurement,
 Device (W/L) ,Model,Idsat (uA/um),Vth0 (V),Idsat (uA/um),Vth0  (V)
-"nmos_3p3
+"nfet_03v3
 
 (10/0.28)",slow ,430,0.73,\-,\-
 ,typical,510,0.63,508,0.644
 ,fast ,590,0.53,\-,\-
-"pmos_3p3
+"pfet_03v3
 
 (10/0.28)",slow,-210,-0.85,\-,\-
 ,typical,-250,-0.73,-254.1,-0.733